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Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application
Stuchlíková, The-Ha ; Remeš, Zdeněk ; Stuchlík, Jiří
The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination\n
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Microscopic study of multifunctional drug molecule adhesion to electronic biosensors coated with diamond and gold nanoparticles
Finsterle, T. ; Pilarčíková, I. ; Bláhová, I.A. ; Potocký, Štěpán ; Kromka, Alexander ; Ukraintsev, Egor ; Nepovimová, E. ; Musílek, K. ; Kuča, K. ; Rezek, B.
The easy and fast detection of drug content and concentration levels is demanded in biological research as well as in clinical practice. Here we study on microscopic level how nanodiamonds and gold nanoparticles interact with a multifunctional drug molecule directly on a biosensor surface. The sensors are made of interdigitated Au electrodes coated by 5 nm hydrogenated or oxidized nanodiamonds and further combined with Au colloidal nanoparticles (size 20 nm) providing nanoscale composite (spacing 100 nm). Atomic force microscopy is employed to measure local tip-surface adhesion forces and surface topography. AFM adhesion maps show that the drug binds to all types of nanoparticles and the adhesion is also significantly influenced by the substrates on which the nanoparticles are deposited. Role of local AFM tip interaction with nanostructured surface is also discussed.\n
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Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n
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The photoluminescence and optical absorptance of plasma hydrogenated nanocrystalline ZnO thin films
Remeš, Zdeněk ; Chang, Yu-Ying ; Stuchlík, Jiří ; Mičová, J.
We have developed the technology of the deposition of the nominally undoped ZnO nanocrystalline thin films by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. We have optimized the photoluminescence spectroscopy for measuring optically scattering thin layers with the high sensitivity, precise sample positioning and very low influence of the scattered excitation light. Here we present the latest results on the enhancement of the photoluminescence of the nanocrystalline ZnO thin films after plasma hydrogenation. The photoluminescence in near UV region has been enhanced whereas the deep defect related photoluminescence has been significantly decreased. We found good room temperature stability of the plasma hydrogenated ZnO nanocrystals in air, but fast degradation at elevated temperature\n
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MOVPE GaN/AlGaN HEMT nano-structures
Hulicius, Eduard ; Kuldová, Karla ; Hospodková, Alice ; Pangrác, Jiří ; Dominec, Filip ; Humlíček, J. ; Pelant, Ivan ; Cibulka, Ondřej ; Herynková, Kateřina
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n
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Adhesion and growth of adipose tissue-derived stem cells on fibrin assemblies with attached growth factors for tissue engineering of heart valves
Filová, Elena ; Trávníčková, Martina ; Knitlová, Jarmila ; Matějka, Roman ; Kučerová, Johanka ; Riedelová, Zuzana ; Brynda, Eduard ; Bačáková, Lucie
Currently used xenogeneic biological heart valve prostheses are decellularized and crosslinked with glutaraldehyde. These grafts usually undergo degeneration and calcification. Pericardium-based heart valve prostheses, re-seeded with autologous cells, i.e. Adipose tissue-derived cells (ASCs) and endothelial cells, could have longer durability and biocompatibility. In order to improve the adhesion of cells and their ingrowth into decellularized pericardium, various fibrin (Fb) layers were developed, i.e. Fb, Fb with covalently bound heparin (H), Fb with either vascular endothelial growth factor (VEGF) or fibroblast growth factor 2 (FGF) in various concentrations (1 ng/ml, 10 ng/ml, 100 ng/ml) or with both VEGF and FGF (100 ng/ml). Growth factors were attached onto Fb via heparin or were adsorbed. ASCs were seeded on theses layers in a DMEM medium supplemented with 2 % of fetal bovine serum, TGFβ1 and BMP-4 (both 2.5 ng/ml), and with ascorbic acid. Cell adhesion and growth/viability was assessed by counted cell number/MTS evaluation. ASCs were stained for differentiation markers of smooth muscle cells, such as alpha-actin, calponin, and myosin heavy chain. On day 7, ASCs on Fb-H-VEGF layers produced both calponin and alpha-actin. An increased FGF concentration caused reduced calponin staining of ASCs. Lack of heparin in fibrin assemblies with growth factors inhibited the production of both alpha-actin and calponin in ASCs. The highest ASCs density/viability was found on Fb-H-VEGF-FGF layer. The proper formulation of fibrin coatings could be favorable for ASCs growth and differentiation and could subsequently support endothelialization of cardiovascular prostheses with endothelial cells.
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